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| 2N5664 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5664J) * JANTX level (2N5664JX) * JANTXV level (2N5664JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * General purpose high power switching * Power Transistor * NPN silicon transistor Features * * * * Hermetically sealed TO-66 metal can Also available in chip configuration Chip geometry 9221 Reference document: MIL-PRF-19500/455 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 100C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Rating 200 250 6 5 2.5 14.3 30 300 3.3 -65 to +200 Unit Volts Volts Volts A W mW/C W mW/C C/W C RJA TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5664 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| COBO Test Conditions IC = 0.5 A, VCE = 2 Volts IC = 1 A, VCE = 5 Volts IC = 3 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 5 Volts TA = -55C IC = 3 A, IB = 300 mA IC = 5 A, IB = 1 A IC = 3 A, IB = 300 mA IC = 5 A, IB = 1 A Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Symbol V(BR)CER V(BR)EBO ICBO1 ICES1 ICES1 Test Conditions IC = 10 A, RBE = 100 IE = 10 A VCB = 200 Volts VCE = 200 Volts VCE = 200 Volts, TA = 150C Min 250 6 100 200 100 Typ Max Units Volts Volts nA nA A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 40 40 15 5 15 Typ Max 120 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Parameter Turn-On Time Turn-Off Time 1.2 1.5 0.4 1.0 Volts Volts Min 2 Typ Max 7 120 Units pF Symbol tON tOFF Test Conditions IC = 1 A, VCC = 100 Volts IC = 1 A, VCC = 100 Volts Min Typ Max 0.25 1.5 Units s s Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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